| 摘要 |
There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film usable as a hardmask. A resist underlayer film forming composition for lithography, comprising: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2), and a content of the hydrolyzable silane of Formula (1) or the hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in all silanes is less than 50% by mole,
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 1 a R 2 b Si(R 3 ) 4 -( a+b )€ƒ€ƒ€ƒ€ƒ€ƒFormula (1)
[in Formula (1), R 1 is a monovalent organic group containing a group of Formula (1-1), Formula (1-2), Formula (1-3), Formula (1-4), or Formula (1-5):
and a is an integer of 1, b is an integer of 0 or 1, and a + b is an integer of 1 or 2],
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 4 a1 R 5 b1 Si(R 6 ) 4-(a1+b1) €ƒ€ƒ€ƒ€ƒ€ƒFormula (2)
[in Formula (2), R 4 is a monovalent organic group containing a group of Formula (2-1), Formula (2-2), or Formula (2-3):
and a 1 is an integer of 1, b 1 is an integer of 0 or 1, and a 1 + b 1 is an integer of 1 or 2]. |
