LIGHT-EMITTING DEVICE

摘要

Light-emitting device having an active layer made of a nitride semiconductor containing In. The active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer and includes a well layer made of In xGa 1-xN (x > 0) containing In and a first barrier layer formed on the well layer and made of Al yGa l-yN (y > 0) containing Al.