发明名称 |
Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases |
摘要 |
<p>Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.</p> |
申请公布号 |
GB2506816(B) |
申请公布日期 |
2015.09.09 |
申请号 |
GB20140001778 |
申请日期 |
2012.06.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RENATA CAMILLO-CASTILLO;PETER B GRAY;DAVID LOUIS HARAME;ALVIN J. JOSEPH;MARWAN H. KHATER;QIZHI LIU |
分类号 |
H01L21/8249;H01L29/732 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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