| 摘要 |
<p>According to one embodiment, a solid state imaging device includes a first image sensor, a second image sensor, and an imaging processing circuit. A plurality of photoelectric conversion units are arranged in each of the first image sensor and the second image sensor. All of the photoelectric conversion units are configured to include pixels with different charge storage times. The imaging processing circuit includes an output combining unit. The output combining unit combines outputs by the pixels with different charge storage times with respect to each of the photoelectric conversion units.</p> |
