发明名称 Semiconductor light emitting diode having a textured structure and method of manufacturing the same
摘要 <p>A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.</p>
申请公布号 EP1670076(B1) 申请公布日期 2015.09.09
申请号 EP20050257481 申请日期 2005.12.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE,JEONG-WOOK;SUNG, YOUN-JOON;PAEK, HO-SUN
分类号 H01L33/02;H01L33/00;H01L33/12;H01L33/20;H01L33/22;H01L33/32;H01L33/62 主分类号 H01L33/02
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