| 摘要 |
In a light-emitting element 1, a light-emitting layer 4, a second conductivity type semiconductor layer 5, a transparent electrode layer 6, a reflecting electrode layer 7 and an insulating layer 8 are stacked in this order on a first conductivity type semiconductor layer 3, while a first electrode layer 10 and a second electrode layer 12 are stacked on the insulating layer 8 in an isolated state. The light-emitting element 1 includes a plurality of insulating tube layers 9, discretely arranged in plan view, passing through the reflecting electrode layer 7, the transparent electrode layer 6, the second conductivity type semiconductor layer 5 and the light-emitting layer 4 continuously from the insulating layer 8 and reaching the first conductivity type semiconductor layer 3, first contacts 11, continuous from the first electrode layer 10, connected to the first conductivity type semiconductor layer 3 through the insulating layer 8 and the insulating tube layers 9, and second contacts 13, continuous from the second electrode layer 12, passing through the insulating layer 8 to be connected to the reflecting electrode layer 7. |
