| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an etching method with high productivity which allows the realization of high-speed etching of a silicon deep channel trench by means of micro wave plasma etching. <P>SOLUTION: The plasma etching method in a plasma processing system is a method for forming a deep silicon trench or hole with a high aspect ratio (the aspect ratio=trench depth/trench width) in a silicon substrate 111 or a Silicon On Insulator (SOI) substrate 111. The plasma processing system has a wave guide 104, and a micro wave-rotation generator 105 provided on part of the wave guide 104 for producing stable plasma even in the conditions of a high voltage and a high micro wave output. The method comprises: using plasma produced by a micro wave, provided that the micro wave to form the plasma has gone through the micro wave-rotation generator 105; using a mixed gas of a gas containing at least fluorine and O<SB POS="POST">2</SB>as a gas used for plasma formation; and applying a bias voltage to a sample holder 110 by use of a high frequency power source 112 to form a deep silicon trench or hole. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
