| 摘要 |
<p>According to the present invention, ultrafine particles of a compound semiconductor (CZTS) represented by the chemical formula Cu2ZnSnS4 are produced by subjecting first to third dialkyldithiocarbamic acid compounds that contain metal elements, Cu, Zn and Sn, respectively to heat treatment in a mixed solvent of an aliphatic amine such as oleylamine and an aliphatic thiol such as dodecanethiol. The temperature of the heat treatment is preferably 250°C or below, still preferably 200°C or below. The content of the aliphatic amine in the mixed solvent is preferably 1.3 to 22vol%, still preferably 2.5 to 7 vol% in terms of volume ratio. Thus, high-purity CZTS ultrafine particles which have a mean particle diameter of less than 5nm and therefore exhibit a desired quantum size effect can be obtained without forming a heterogeneous phase.</p> |
