发明名称 |
Optoelectronic semiconductor component |
摘要 |
An optoelectronic semiconductor component, includes at least two optoelectronic semiconductor chips, which are located on a common mounting surface. An optical element is arranged downstream of the semiconductor chips in a main emission direction and is spaced from the semiconductor chips. In a direction transverse to the main emission direction the optical element has a transmission gradient in a transitional region. The transitional region does not overlap the semiconductor chips, when viewed in plan view onto the mounting surface. |
申请公布号 |
US9130135(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201213988005 |
申请日期 |
2012.01.27 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
Kuhn Gerhard;Markytan Ales;Gärtner Christian;Streppel Ulrich |
分类号 |
H01L29/18;H01L33/60;H01L33/58;H01L25/075;F21V13/04;F21Y101/02;F21Y113/00 |
主分类号 |
H01L29/18 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. An optoelectronic semiconductor component comprising:
a plurality of optoelectronic semiconductor chips located on a common mounting surface; and an optical element arranged downstream of the semiconductor chips in a main emission direction and spaced from the semiconductor chips; wherein the optical element has a transmission gradient in a transitional region in a direction transverse to the main emission direction and wherein the transitional region does not overlap the semiconductor chips when viewed in plan view onto the mounting surface; and wherein, in a central region of the optical element, a transmittance for radiation emitted by the semiconductor chips amounts to at least 80% and in the transitional region the transmittance decreases monotonically or strictly monotonically in a direction away from the central region and amounts to at most 20% at an outer edge of the transitional region. |
地址 |
Regensburg DE |