Semiconductor light receiving device and light receiving apparatus

摘要

A semiconductor light receiving device includes a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer defining one of a cathode region and an anode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer defining the other of the cathode region and the anode region and forming a junction with the light absorbing region. The light absorbing region includes a semiconductor layer having a conductivity type opposite to the conductivity type of the first semiconductor layer. The semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer.

主权项

1. A semiconductor light receiving device comprising:
a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer having a n-type conductivity and including a cathode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer including an anode region and forming a junction with the light absorbing region, wherein the light absorbing region includes a semiconductor layer having a p-type conductivity, the semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer, at the p-n junction, an acceptor concentration in the semiconductor layer of the light absorbing region is lower than a donor concentration in the first semiconductor layer, and the band gap energies of the cathode region and the anode region are greater than the band gap energy of the light absorbing region.