Trench isolation for monolithically isled solar photovoltaic cells and modules

摘要

Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

主权项

1. A method for forming a back contact back junction solar cell, comprising:
forming base and emitter contact metallization on the backside of a back contact back junction solar cell substrate; forming a trench stop layer on the backside of a back contact back junction solar cell substrate and electrically isolated from said base and emitter contact metallization, said trench stop layer having a pattern for forming a plurality of semiconductor regions; forming an electrically insulating layer on said base and emitter contact metallization and said trench stop layer; and forming a trench isolation pattern through said back contact back junction solar cell substrate to said trench stop layer and partitioning said back contact back junction solar cell substrate into said plurality of solar cell semiconductor regions on said electrically insulating layer.