Wafer processing

摘要

Semiconductor device and method for forming a semiconductor device are presented. A substrate having top and bottom pad stacks is provided. Each pad stack includes at least first and second pad layers. The second pad layer of the bottom pad stack is removed by a batch process. Trench isolation regions are formed in the substrate.

主权项

1. A method of forming a device comprising:
providing a substrate having top and bottom sides; providing a top pad stack on the top side of the substrate and a bottom pad stack on the bottom side of the substrate, wherein each pad stack comprises at least first and second pad layers; forming a protective layer only over a top surface of the top pad stack; removing the second pad layer of the bottom pad stack by a batch process, wherein the entire protective layer remains over the top pad stack and protects the top pad stack during removing of the second pad layer of the bottom pad stack; removing the entire protective layer from the top surface of the top pad stack after removing the second pad layer of the bottom pad stack and prior to forming trenches; forming the trenches in the substrate, wherein forming the trenches comprises
patterning the top pad stack using mask and etch techniques after removing the entire protective layer from the top surface of the top pad stack, andpatterning the substrate to form the trenches using the patterned top pad stack; and forming isolation regions in the trenches.