| 发明名称 | Integrated inductor | ||
| 摘要 | A method of forming an inductor in a crystal semiconductor layer is provided, including generating an ion beam, directing the ion beam to a surface of the crystal semiconductor layer, applying a magnetic field to the ion beam to generate a helical motion of the ions and forming a three-dimensional helical structure in the crystal semiconductor layer by means of the ions of the ion beam. | ||
| 申请公布号 | US9129843(B1) | 申请公布日期 | 2015.09.08 |
| 申请号 | US201414302880 | 申请日期 | 2014.06.12 |
| 申请人 | GLOBALFOUNDRIES Inc. | 发明人 | Flachowsky Stefan;Richter Ralf;Javorka Peter;Hoentschel Jan |
| 分类号 | H01F17/00;H01L49/02;H01L21/263;H01L21/762;H01L27/06;H01L29/06;B23K26/00;B23K26/38 | 主分类号 | H01F17/00 |
| 代理机构 | Amerson Law Firm, PLLC | 代理人 | Amerson Law Firm, PLLC |
| 主权项 | 1. A method of forming an inductor in a crystal semiconductor layer, the method comprising: generating an ion beam comprising of ions; directing said ion beam to a surface of said crystal semiconductor layer; applying a magnetic field to said ion beam to generate a helical motion of the ions; and forming a three-dimensional helical structure in said crystal semiconductor layer by means of said ions of said ion beam, wherein said helical structure comprises ions of said ion beam penetrated into said crystal semiconductor layer. | ||
| 地址 | Grand Cayman KY | ||