Method of manufacturing a nonvolatile memory device having a variable resistance element whose resistance value changes reversibly upon application of an electric pulse

摘要

A method of manufacturing a nonvolatile memory device includes: forming a first electrode; forming, above the first electrode, a metal oxide material layer including a first metal oxide; forming a mask above part of the metal oxide material layer main surface; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region including a second metal oxide having a lower degree of oxygen deficiency than the first metal oxide; removing the mask; forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region that is a region of the metal oxide material layer other than the high oxygen concentration region, a second variable resistance layer including a third metal oxide having a lower degree of oxygen deficiency than the first metal oxide; and forming a second electrode above the second variable resistance layer.

主权项

1. A method of manufacturing a nonvolatile memory device, the method comprising:
forming a first electrode; forming, above the first electrode, a metal oxide material layer comprising a first metal oxide; forming a mask above a portion of a main surface of the metal oxide material layer; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide, to form a first variable resistance layer including the metal oxide material layer in which the high oxygen concentration region is formed; removing the mask; forming, above the first variable resistance layer, a second variable resistance layer comprising a third metal oxide having a degree of oxygen deficiency lower than the degree of oxygen deficiency of the first metal oxide; and forming a second electrode above the second variable resistance layer.