发明名称 |
Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions |
摘要 |
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In. |
申请公布号 |
US9130155(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201314048329 |
申请日期 |
2013.10.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Chepulskyy Roman;Tang Xueti;Apalkov Dmytro;Khvalkovskiy Alexey Vasilyevitch;Nikitin Vladimir;Krounbi Mohamad Towfik |
分类号 |
H01L43/08;G11C11/16;H01L43/10;H01L43/12 |
主分类号 |
H01L43/08 |
代理机构 |
Convergent Law Group LLP |
代理人 |
Convergent Law Group LLP |
主权项 |
1. A magnetic junction for use in a magnetic device comprising:
a reference layer; a nonmagnetic spacer layer; and a free layer, the nonmagnetic spacer layer residing between the reference layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and wherein a portion of the magnetic junction includes at least one magnetic substructure, the at least one magnetic substructure including at least one Fe layer and at least one nonmagnetic insertion layer, the at least one Fe layer sharing at least one interface with the at least one nonmagnetic insertion layer, each of the at least one nonmagnetic insertion layer consisting of at least one of W, I, Bi, Zn, Mo, Ag, Cd and In. |
地址 |
Gyeonggi-Do KR |