Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories

摘要

A method and system provide a magnetic junction. A free layer, a symmetry filter, and a pinned layer are provided. The free layer has a magnetic moment switchable between stable states when a write current is passed through the magnetic junction. The symmetry filter transmits charge carriers having a first symmetry with higher probability than charge carriers having another symmetry. The symmetry filter resides between the free layer and the pinned layer. The free layer and/or the pinned layer lies in a plane, has the charge carriers of the first symmetry in a spin channel at a Fermi level, lacks the charge carriers of the first symmetry at the Fermi level in another spin channel, and has a nonzero magnetic moment component perpendicular to the plane. The free layer and/or the pinned layer and the symmetry filter has at least one lattice mismatch of less than seven percent.

主权项

1. A magnetic junction comprising:
a free layer having a first magnetic moment switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; a symmetry filter that transmits charge carriers having a first symmetry with a higher probability than the charge carriers having a second symmetry; a pinned layer having a second magnetic moment pinned in a particular direction, the symmetry filter residing between the free layer and the pinned layer; wherein at least one of the free layer and the pinned layer has the charge carriers of the first symmetry at a Fermi level in a spin channel, lacks the charge carriers of the first symmetry at the Fermi level in another spin channel, lies substantially in a plane and has a nonzero magnetic moment component substantially perpendicular to the plane, the symmetry filter and at least one of the free layer and the pinned layer having a lattice mismatch of less than seven percent.