Semiconductor light emitting device

摘要

A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.

主权项

1. A semiconductor light emitting device comprising:
an n-type semiconductor layer; an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer; an n-type electrode disposed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers; and a p-type electrode disposed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger, wherein the n-type semiconductor layer, the active layer and the p-type semiconductor layer configure a light emitting structure, the n-type electrode pad is disposed inside of a light emission surface provided when the light emitting structure is viewed from above the p-type semiconductor layer, and the p-type electrode pad is disposed adjacent to an edge of the light emission surface, the first n-type electrode finger has a form in which the first n-type electrode finger is extended from the n-type electrode pad to an edge of the light emission surface, opposing an edge on which the p-type electrode pad is located, to then branch in two directions along edges of the light emission surface, and the second n-type electrode finger has a form in which the second n-type electrode finger is extended from the n-type electrode pad in two different directions and the portions thereof extended in two directions are then respectively bent toward the edge of the light emission surface on which the p-type electrode pad is located, and the p-type electrode finger has a form in which the p-type electrode finger is extended from the p-type electrode pad to branch in two directions, along edges of the light emission surface and bypasses a position in which the n-type electrode pad is located, and is then bent toward a portion of the first n-type electrode finger extended from the n-type electrode pad to an edge of the light emission surface.