Group III-V device with a selectively modified impurity concentration

摘要

There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.

主权项

1. A semiconductor structure comprising:
a substrate; a transition body over said substrate; a group III-V intermediate body having a bottom surface over said transition body; a group III-V device layer over a top surface of said group III-V intermediate body; said group III-V intermediate body having a continuously reduced impurity concentration wherein a higher impurity concentration at said bottom surface is continuously reduced to a lower impurity concentration at said top surface; wherein said transition body includes a group III-V transition structure having a selectively modified impurity concentration that rises and falls between a bottom surface of said transition body having a bottom surface impurity concentration and a top surface of said transition body having a top surface impurity concentration less than or substantially equal to said bottom surface impurity concentration; wherein said selectively modified impurity concentration rises above said bottom surface impurity concentration between said bottom surface and said top surface.