Electron beam plasma source with arrayed plasma sources for uniform plasma generation

摘要

A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.

主权项

1. A plasma reactor for processing a workpiece, comprising:
a workpiece processing chamber having a processing chamber enclosure comprising a ceiling and a side wall and an electron beam opening in said side wall, a workpiece support pedestal in said processing chamber having a workpiece support surface facing said ceiling and defining a workpiece processing region between said workpiece support surface and said ceiling, said electron beam opening facing said workpiece processing region; an electron beam source chamber comprising an electron beam source chamber enclosure that is open to said electron beam opening of said workpiece processing chamber; an array of plasma sources distributed along a portion of said electron beam source chamber enclosure opposite from said electron beam opening, each of said plasma sources comprising a supply of plasma source power and a plasma source power applicator coupled to the supply of plasma source power; a controller governing each supply of plasma source power of each of said plasma sources; wherein: said plasma sources comprise respective RF capacitively coupled plasma sources facing respective regions of said electron beam source chamber; said plasma source power applicator of each of said plasma sources comprises:
(a) an insulated electrode adjacent said electron beam source chamber enclosure and facing a respective one of said regions; and(b) wherein said insulated electrode is coupled to the corresponding plasma source power supply.