发明名称 Method of providing an operating voltage in a memory device and a memory controller for the memory device
摘要 A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.
申请公布号 US9129697(B2) 申请公布日期 2015.09.08
申请号 US201414458453 申请日期 2014.08.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Kim Moo Sung;Hahn Wook Ghee
分类号 G11C16/04;G11C16/26;G11C11/56;G11C16/10 主分类号 G11C16/04
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A method of reading a nonvolatile memory device, comprising: applying a first read voltage to a selected word line connected to memory cells of the nonvolatile memory device; applying a first pass voltage to a first unselected word line, the first unselected word line being adjacent to the selected word line while the first read voltage is applied to the selected word line; applying a second pass voltage to at least one of remaining unselected word lines other than the first unselected word line while the first read voltage is applied to the selected word line, the second pass voltage being less than the first pass voltage; applying a second read voltage to the selected word line connected to the memory cells of the nonvolatile memory device, the second read voltage being less than the first read voltage; applying a third pass voltage to the first unselected word line while the second read voltage is applied to the selected word line, the third pass voltage being different from the first pass voltage; and applying a fourth pass voltage to the at least one of the remaining unselected word lines other than the first unselected word line while the second read voltage is applied to the selected word line, the fourth pass voltage being substantially the same as the second pass voltage, wherein the first unselected word line and a string select line are in the same side relative to the selected word line.
地址 Suwon-Si, Gyeonggi-Do KR