Superlattice recording layer for a phase change memory

摘要

A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to a phase separation. The laminated structure includes a film containing an Sb atom(s) and a film containing a Ge atom(s), which films constitute a superlattice structure. In the laminated structure, phase separation of the film containing the Sb atom and the film containing the Ge atom allows data to be recorded and erased efficiently.

主权项

1. A solid-state memory comprising:
a recording layer in which data is recorded or erased, the recording layer including a laminated structure in which electric properties are changed in response to a phase separation, the laminated structure including a first layer containing an Sb atom(s) and a second layer containing a Ge atom(s), which layers are laminated so as to constitute a superlattice structure, wherein the second layer is constituted by an atomic layer having five or less Ge atoms, and the first layer is constituted by an atomic layer having an odd number of Sb atom(s).