Semiconductor devices and methods of manufacture thereof

摘要

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming an etch stop layer over a workpiece. The etch stop layer has an etch selectivity to a material layer of the workpiece of greater than about 4 to about 30. The method includes forming an insulating material layer over the etch stop layer, and patterning the insulating material layer using the etch stop layer as an etch stop.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a first etch stop layer over a workpiece, the etch stop layer having an etch selectivity to a material layer of the workpiece; forming a second etch stop layer over the first etch stop layer, forming an insulating material layer over the second etch stop layer; patterning the insulating material layer using the second etch stop layer as an etch stop; etching the second etch stop layer exposed by the patterning using the first etch stop layer as an etch stop; and removing the portions of the first etch stop layer exposed by the etching.