发明名称 |
Laser-enhanced chemical etching of nanotips |
摘要 |
A method for sharpening a nanotip involving a laser-enhanced chemical etching is provided. The method includes immersing a nanotip in an etchant solution. The nanotip includes a base and an apex, the apex having a diameter smaller than a diameter of the base. The method also includes irradiating the nanotip with laser fluence to establish a temperature gradient in the nanotip along a direction from the apex to the base of the nanotip such that the apex and base are etched at different rates. |
申请公布号 |
US9128117(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201314097211 |
申请日期 |
2013.12.04 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
Mai ZhiHong;Lam Jeffrey C.;Bin Dawood Mohammed Khalid;Ng Tsu Hau |
分类号 |
H01L21/302;G01Q70/16;B82Y35/00;C25F3/08 |
主分类号 |
H01L21/302 |
代理机构 |
Horizon IP Pte. Ltd. |
代理人 |
Horizon IP Pte. Ltd. |
主权项 |
1. A method of forming an integrated circuit (IC) device, comprising:
sharpening a nanotip, the sharpening comprising:
immersing the nanotip in an etchant, the nanotip comprising a base and an apex, the apex having a diameter smaller than a diameter of the base, andirradiating the nanotip with laser fluence to establish a temperature gradient in the nanotip along a direction from the apex to the base of the nanotip such that the apex and base are etched at different rates; performing wafer metrology on a wafer having a plurality of devices using the sharpened nanotip to measure device performance. |
地址 |
Singapore SG |