| 发明名称 | Semiconductor light emitting device | ||
| 摘要 | The semiconductor light emitting device includes: a substrate; a first cladding layer disposed on the substrate; an emitting layer disposed on the first cladding layer; a second cladding layer disposed on the emitting layer; a contact layer disposed at a predetermined region on the second cladding layer; an optically transmissive electrode layer disposed on the contact layer; a surface electrode layer disposed on the optically transmissive electrode layer; and an aperture formed by opening a region corresponding to the predetermined region of the surface electrode layer. There is provided a semiconductor light emitting device of which the light extracting efficiency can be improved to achieve high luminance. | ||
| 申请公布号 | US9130126(B2) | 申请公布日期 | 2015.09.08 |
| 申请号 | US201414260847 | 申请日期 | 2014.04.24 |
| 申请人 | ROHM CO., LTD. | 发明人 | Ikeda Shigefumi;Ochiai Yasutomo |
| 分类号 | H01L29/88;H01L33/38;H01L31/00;H01L33/40;H01L33/20;H01L33/42 | 主分类号 | H01L29/88 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A semiconductor light emitting device, comprising: a substrate; a first cladding layer disposed on the substrate; an emitting layer disposed on the first cladding layer; a second cladding layer disposed on the emitting layer; a contact layer disposed at a predetermined region on the second cladding layer; an optically transmissive electrode layer disposed on the contact layer; a surface electrode layer disposed on the optically transmissive electrode layer; and an aperture formed by opening a region corresponding to the predetermined region of the surface electrode layer, wherein an impurity density of a portion of the contact layer in contact with the optically transmissive electrode layer is equal to or greater than 1.5×1019 cm−3. | ||
| 地址 | Kyoto JP | ||