| 主权项 |
1. A semiconductor device comprising:
a substrate having an upper surface that defines a sensing region; a patterned conductive layer provided on the upper surface, the patterned conductive layer including a first electrode structure located in the sensing region and readout conductors located around the sensing region; an absorber structure suspended over the sensing region and spaced a first distance apart from the first electrode structure, the absorber structure including i) suspension structures extending upwardly from the substrate and being electrically connected to the readout conductors, and ii) a pillar structure extending downwardly from the absorber structure toward the first electrode structure, the pillar structure having a contact portion located a second distance apart from the first electrode structure, the second distance being less than the first distance; and test circuitry electrically connected to the absorber structure, the test circuitry being configured to selectively apply an actuation voltage to the absorber structure, wherein the absorber structure is configured to flex toward the substrate under a test condition, wherein the second distance is selected such that the contact portion of the pillar structure is positioned in contact with the first electrode structure when the absorber structure is flexed in response to the test condition, wherein the test condition comprises an actuation voltage being applied to the first electrode structure, and wherein the second distance is selected such that the contact portion of the pillar structure is attracted to the first electrode structure by an electrostatic charge induced by the actuation voltage. |
