发明名称 |
Amorphous oxide and field effect transistor |
摘要 |
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals. |
申请公布号 |
US9130049(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201313923009 |
申请日期 |
2013.06.20 |
申请人 |
Canon Kabushiki Kaisha;Tokyo Institute of Technology;Japan Science and Technology Agency |
发明人 |
Sano Masafumi;Nakagawa Katsumi;Hosono Hideo;Kamiya Toshio;Nomura Kenji |
分类号 |
H01L29/06;H01L29/786;H01L21/428;H01L21/02 |
主分类号 |
H01L29/06 |
代理机构 |
Fitzpatrick, Cella, Harper & Scinto |
代理人 |
Fitzpatrick, Cella, Harper & Scinto |
主权项 |
1. A field effect transistor comprising:
a gate electrode, a gate insulator, and an active layer of an amorphous oxide selected from the group consisting of an amorphous oxide containing In, Zn and Sn; an amorphous oxide containing In and Zn; an amorphous oxide containing In and Sn; an amorphous oxide containing In; and an amorphous oxide containing In, Ga and Zn, wherein the active layer has a composition varying in a layer thickness direction such that the concentration of at least one of In, Zn and oxygen is higher in the region close to the gate insulator than in the region away from the gate insulator, and wherein the active layer has an electron carrier concentration of 1012/cm3 or more and less than 1018/cm3. |
地址 |
Tokyo JP |