Semiconductor memory device and method for manufacturing the same

摘要

According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a silicon film provided on the first insulating film, a metal silicide film provided on the silicon film, a second insulating film provided on the metal silicide film, and an electrode provided on the second insulating film.

主权项

1. A semiconductor memory device comprising:
a semiconductor substrate; a first insulating film provided on the semiconductor substrate; a floating gate comprising, a silicon film provided on the first insulating film, and a metal silicide film provided on the silicon film, the metal silicide film including, an oxidized portion made of silicon oxide and having an inverted cup shape, and a metal silicide portion made of metal silicide being located inside the oxidized portion, said metal silicide portion having side surfaces circumferentially surrounded by the oxidized portion and a top surface covered by the oxidized portion; a second insulating film provided on the metal silicide film; and a control gate electrode provided on the second insulating film.