发明名称 Using a buffer to replace failed memory cells in a memory component
摘要 Methods and data processing systems for using a buffer to replace failed memory cells in a memory component are provided. Embodiments include determining that a first copy of data stored within a plurality of memory cells of a memory component contains one or more errors; in response to determining that the first copy contains one or more errors, determining whether a backup cache within the buffer contains a second copy of the data; and in response to determining that the backup cache contains the second copy of the data, transferring the second copy from the backup cache to a location within an error data queue (EDQ) within the buffer and updating the buffer controller to use the location within the EDQ instead of the plurality of memory cells within the memory component.
申请公布号 US9128887(B2) 申请公布日期 2015.09.08
申请号 US201213589487 申请日期 2012.08.20
申请人 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. 发明人 Dusanapudi Manoj;Jayaraman Prasanna;Lingambudi Anil B.;Paulraj Girisankar;Sethuraman Saravanan;Vidyapoornachary Diyanesh B.
分类号 G06F11/16 主分类号 G06F11/16
代理机构 Kennedy Lenart Spraggins LLP 代理人 Lenart Edward J.;Brown Katherine S.;Kennedy Lenart Spraggins LLP
主权项 1. A method comprising: by computer program instructions on a computing device that controls a buffer, determining that a first copy of data stored at a first location within a plurality of memory cells of a memory component contains one or more errors;in response to determining that the first copy contains one or more errors, determining whether a backup cache within the buffer contains a second copy of the data;in response to determining that the backup cache does not contain the second copy of the data, determining whether the one or more errors contained in the first copy are correctable; andif the one or more errors are not correctable, creating a non-flushable entry within an error data queue (EDQ) and updating the computing device to use a location of the non-flushable entry within the EDQ instead of the first location within the plurality of memory cells.
地址 Singapore SG