发明名称 |
Light-emitting diode chip |
摘要 |
A light-emitting diode (LED) chip comprising a first semiconductor layer; an active layer disposed on said first semiconductor layer; a second semiconductor layer disposed on said active layer; metal layers which disposed on said second semiconductor layer and overlapped with each other indirectly, comprising a first metal layer which connected to a first electrode deposited on said first semiconductor, and a second metal layer which connected to a transparent conductive layer and a second electrode deposited on said second semiconductor layer; wherein said second metal layer deposited on said first metal layer which further connected to said first semiconductor layer through an indentation. |
申请公布号 |
US9130129(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201213715120 |
申请日期 |
2012.12.14 |
申请人 |
Formosa Epitaxy Incorporation |
发明人 |
Liao Han-Zhong;Lu Chih-Hsuan;Li Fang-I;Cheng Wei-Kang;Pan Shyi-Ming |
分类号 |
H01L33/42;H01L33/20;H01L33/38 |
主分类号 |
H01L33/42 |
代理机构 |
Rosenberg, Klein & Lee |
代理人 |
Rosenberg, Klein & Lee |
主权项 |
1. A light-emitting diode (LED) chip comprising:
a first semiconductor layer; an active layer disposed on said first semiconductor layer; a second semiconductor layer disposed on said active layer; at least one indentation disposed on said second semiconductor layer, said indentation comprising a bottom part extending downward to reach said first semiconductor layer and exposing said first semiconductor layer; and a plurality of metal layers which disposed on said second semiconductor layer, comprising a first metal layer which is connected to said first semiconductor layer through said bottom part, and a second metal layer which is connected to a transparent conductive layer deposited on said second semiconductor layer; wherein said second metal layer indirectly deposited on said first metal layer. |
地址 |
Taoyuan TW |