| 摘要 |
A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first semiconductor layer doped with a first dopant while including a first region and a second region stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers, a first electrode disposed on the first region, and a functional member disposed between one side surface of the light emitting structure adjacent to the first electrode and the first electrode while being disposed at the first region, wherein the functional member has a thickness greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a surface of the first region. |
| 主权项 |
1. A light emitting device comprising:
a light emitting structure comprising a first semiconductor layer doped with a first dopant while comprising a first region and a second region disposed over the first region and having a first portion stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers; a first electrode disposed directly on the first region of the first semiconductor layer; a second electrode disposed on an upper surface of the second semiconductor layer; a light transmitting electrode layer disposed between the second semiconductor layer and the second electrode, and a portion of an upper surface of the light transmitting electrode layer is exposed; and a first conductive functional member including a conductive material and disposed on an upper surface of the first region and between one side surface of the light emitting structure and the first electrode, wherein the first functional member has a height greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a thickness direction of the light emitting structure, and wherein the first functional member is disposed in parallel with a side wall surface of a second stepped portion of the second region, the second region includes the second stepped portion relative to the first region and a portion of the first semiconductor layer being below the stepped portion, wherein the first functional member reflects or refracts light emitted from the active layer to prevent the light from being directed toward the first electrode, the first functional member being spaced apart from and does not contact any portion of the first electrode and the second electrode; and a separate second functional member fabricated from an insulative material and being non-conductive, the second functional member being disposed on an upper surface of the first region and between the first functional member and one side surface of the light emitting structure, a face of the second functional member contacts a face of the first functional member, an upper surface of the second functional member is aligned with the upper surface of the light transmitting electrode layer, the second functional member has a height equal to a thickness measured from an upper surface of the first region to at least the upper surface of the second semiconductor layer, the second functional member height above the upper surface of the first region is greater than a height of the first functional member measured from the upper surface of the first region such that the second functional member prevents the first functional member from contacting the second semiconductor layer, and the second functional member being spaced apart from and does not contact and portion of the first electrode and the second electrode, and the second functional member is in direct contact a side wall surface of the second stepped portion of the second region. |
