Power semiconductor module

摘要

A power semiconductor module (100) includes: an electrode plate (2) in which a body portion (2a) and an external connection terminal portion (2b) are integrally formed, and the body portion (2a) is arranged on the same flat surface; a semiconductor chip (1) mounted on one surface (mounting surface) (2c) of the body portion (2a); and a resin package (3) in which the other surface (heat dissipation surface) (2d) of the body portion (2a) is exposed, and the body portion (2a) of the electrode plate (2) and the semiconductor chip (1) are sealed with resin. The heat dissipation surface (2d) is the same surface as the bottom (3a) of the resin package (3); and consequently, heat dissipation properties and reliability are improved and a reduction in size can be achieved.

主权项

1. A power semiconductor module comprising:
a plurality of electrode plates, each of the plurality of electrode plates having an external connection terminal portion integrally formed with a body portion, and the body portion of each of the plurality of electrode plates is arranged on a same flat surface; a semiconductor chip mounted on and electrically connected to a first surface of the body portion of one of the plurality of electrode plates; and a resin package in which at least a part of a second surface of the body portion of said one of the plurality of electrode plates is exposed as an outer surface of the power semiconductor module, and the body portion of said one of the plurality of electrode plates and said semiconductor chip on the first surface are sealed with resin, wherein the external connection terminal portion extends outside the resin package along the same flat surface.