发明名称 Address transforming circuit and semiconductor memory device including the same
摘要 An address transforming circuit that can change a memory mapping when a system is booted includes a switch control signal generating circuit and an address transforming unit. The switch control signal generating circuit generates alternately enabled switch control signals synchronized with a reset signal. The address transforming unit transforms bits of a first address to generate a second address in response to the switch control signals. Accordingly, a semiconductor memory device including the address transforming circuit has a long lifetime and high reliability.
申请公布号 US9128817(B2) 申请公布日期 2015.09.08
申请号 US201213343803 申请日期 2012.01.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Kim Seok-Il;Han You-Keun;Choi Sung-Ho
分类号 G11C8/04;G06F12/02;G11C8/06 主分类号 G11C8/04
代理机构 Onello & Mello, LLP 代理人 Onello & Mello, LLP
主权项 1. An address transforming circuit, comprising: a switch control signal generating circuit configured to generate alternately enabled switch control signals that are synchronized with a reset signal; and an address transforming unit configured to transform bits of a first address to generate a second address in response to the switch control signals, wherein the switch control signals include: a first switch control signal configured to be enabled in response to the reset signal; a second switch control signal configured to be enabled in response to a falling edge of the first switch control signal; and a third switch control signal configured to be enabled in response to a falling edge of the second switch control signal.
地址 KR