发明名称 |
Address transforming circuit and semiconductor memory device including the same |
摘要 |
An address transforming circuit that can change a memory mapping when a system is booted includes a switch control signal generating circuit and an address transforming unit. The switch control signal generating circuit generates alternately enabled switch control signals synchronized with a reset signal. The address transforming unit transforms bits of a first address to generate a second address in response to the switch control signals. Accordingly, a semiconductor memory device including the address transforming circuit has a long lifetime and high reliability. |
申请公布号 |
US9128817(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201213343803 |
申请日期 |
2012.01.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Kim Seok-Il;Han You-Keun;Choi Sung-Ho |
分类号 |
G11C8/04;G06F12/02;G11C8/06 |
主分类号 |
G11C8/04 |
代理机构 |
Onello & Mello, LLP |
代理人 |
Onello & Mello, LLP |
主权项 |
1. An address transforming circuit, comprising:
a switch control signal generating circuit configured to generate alternately enabled switch control signals that are synchronized with a reset signal; and an address transforming unit configured to transform bits of a first address to generate a second address in response to the switch control signals, wherein the switch control signals include: a first switch control signal configured to be enabled in response to the reset signal; a second switch control signal configured to be enabled in response to a falling edge of the first switch control signal; and a third switch control signal configured to be enabled in response to a falling edge of the second switch control signal. |
地址 |
KR |