发明名称 Non-volatile memory devices, methods of operating non-volatile memory devices, and systems including the same
摘要 Random sequence data is sequentially generated based on a seed assigned to a selected memory space, and one of access-requested segments of the selected memory space is logically combined with the sequentially generated random sequence data to transfer the access-requested segment. The sequentially generating and the logically combining are iteratively performed until remaining access-requested segments all transferred.
申请公布号 US9128623(B2) 申请公布日期 2015.09.08
申请号 US201514660897 申请日期 2015.03.17
申请人 Samsung Electronics Co., Ltd. 发明人 Mun Kui-Yon;Lee Heewon
分类号 G06F12/00;G06F3/06;G11C16/10;G11C29/52;G11C16/34 主分类号 G06F12/00
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A nonvolatile memory system comprising: a nonvolatile memory device including a plurality of pages including a first page and a second page, the second page being different from the first page; and a memory controller configured to receive input data including first data, second data, third data and fourth data, the memory controller being configured to generate a first page data and a second page data, the memory controller being configured to provide a first address, a second address, the first page data and the second page data to the nonvolatile memory device, wherein the memory controller is configured to generate the first page data including first segment data and second segment data, the first segment data being generated by randomizing the first data using a first random sequence, the second segment data being generated by randomizing the second data using the first random sequence, the memory controller is configured to generate the second page data including third segment data and fourth segment data, the third segment data being generated by randomizing the third data using a second random sequence, the fourth segment data being generated by randomizing the fourth data using the second random sequence that is different from the first random sequence, the nonvolatile memory device is configured to program the first page data into the first page in response to the first address, the first page corresponding to the first address, and the nonvolatile memory device is configured to program the second page data into the second page in response to the second address, the second page corresponding to the second address.
地址 Suwon-si, Gyeonggi-do KR