| 发明名称 |
Magnetic memory and method for manufacturing the same |
| 摘要 |
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier. |
| 申请公布号 |
US9130143(B2) |
申请公布日期 |
2015.09.08 |
| 申请号 |
US201414201038 |
申请日期 |
2014.03.07 |
| 申请人 |
|
发明人 |
Nagase Toshihiko;Watanabe Daisuke;Sawada Kazuya;Ueda Koji;Eeh Youngmin;Yoda Hiroaki |
| 分类号 |
G11C11/16;H01L43/02;H01L43/12 |
主分类号 |
G11C11/16 |
| 代理机构 |
Holtz, Holtz, Goodman & Chick PC |
代理人 |
Holtz, Holtz, Goodman & Chick PC |
| 主权项 |
1. A magnetic memory comprising:
a substrate; and a magnetoresistive element provided on the substrate, the magnetoresistive element comprising: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, wherein the first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunnel barrier layer. |
| 地址 |
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