Light emitting diode having carbon nanotubes therein and method for manufacturing the same

摘要

A light emitting diode includes a substrate, an un-doped GaN layer, a plurality of carbon nanotubes, an N-type GaN layer, an active layer formed on the N-type GaN layer, and a P-type GaN layer formed on the active layer. The substrate includes a first surface and a second surface opposite and parallel to the first surface. A plurality of convexes is formed on the first surface of the substrate. The un-doped GaN layer is formed on the first surface of the substrate. The plurality of carbon nanotubes is formed on an upper surface of the un-doped GaN layer. The plurality of carbon nanotubes is spaced from each other to expose a portion of the upper surface of the un-doped GaN layer. The N-type GaN layer is formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein.

主权项

1. A light emitting diode, comprising:
a substrate comprising a first surface and a second surface opposite and parallel to the first surface, a plurality of convexes being formed on the first surface of the substrate; an un-doped GaN layer formed on the first surface of the substrate; a plurality of carbon nanotubes formed on an upper surface of the un-doped GaN layer, the plurality of carbon nanotubes being spaced from each other to expose a portion of the upper surface of the un-doped GaN layer; an N-type GaN layer formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein; an active layer formed on the N-type GaN layer; and a P-type GaN layer formed on the active layer.