Stacked capacitor structure and a fabricating method for fabricating the same

摘要

A stacked capacitor structure of the instant disclosure comprises a substrate and a plurality of stacked capacitors. The substrate has an insulating layer formed thereon and a plurality of contact plugs in the insulating layer, wherein the contact plugs are exposed on the upper surface of the insulating layer. Specially, each of the stacked capacitors comprises a lower electrode, a dielectric layer, and an upper electrode. The lower electrode is arranged on one of the contact plugs and has a columnar base portion and a crown shaped upper portion. The dielectric layer is arranged on the lower electrode and covers the outer surface of the lower electrode. The upper electrode is arranged above the lower electrode, wherein the dielectric layer is intermediately between the upper electrode and the lower electrode.

主权项

1. A stacked capacitor structure comprising:
a substrate having an insulating layer formed thereon and a plurality of contact plugs in the insulating layer, wherein the contact plugs are exposed on the upper surface of the insulating layer; and a plurality of stacked capacitors, each of which comprising: a lower electrode arranged on one of the contact plugs, wherein the lower electrode has a columnar base portion and a crown shaped upper portion and a middle portion arranged between the columnar base portion and a crown shaped upper portion; an upper electrode arranged above the lower electrode; a dielectric layer arranged between the upper electrode and the lower electrode, wherein the dielectric layer covers the outer surface of the lower electrode, the dielectric layer having a height ranging from ⅓ to ½ of a height of the columnar base portion.