Laser and plasma etch wafer dicing using physically-removable mask

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The patterned mask is then separated from the singulated integrated circuits.

主权项

1. A method of dicing a semiconductor wafer comprising a front surface having a plurality of integrated circuits thereon and having a back surface opposite the front surface, the method comprising:
forming an outermost mask on the front surface of the semiconductor wafer, the outermost mask covering and protecting the integrated circuits; patterning the outermost mask and a portion of the semiconductor wafer with a laser scribing process to provide a patterned outermost mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits, each of the trenches having a width; plasma etching, with the patterned outermost mask exposed, the semiconductor wafer through the trenches to form corresponding trench extensions and to form singulated integrated circuits, each of the corresponding trench extensions having the width; and separating the patterned outermost mask from the singulated integrated circuits.