| 发明名称 | Method to etch non-volatile metal materials | ||
| 摘要 | A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds. A desorption of the volatile organometallic compounds is performed. | ||
| 申请公布号 | US9130158(B1) | 申请公布日期 | 2015.09.08 |
| 申请号 | US201414325911 | 申请日期 | 2014.07.08 |
| 申请人 | Lam Research Corporation | 发明人 | Shen Meihua;Singh Harmeet;Tan Samantha S. H.;Marks Jeffrey;Lill Thorsten;Janek Richard P.;Yang Wenbing;Sharma Prithu |
| 分类号 | H01L21/00;H01L43/12;H01L21/02 | 主分类号 | H01L21/00 |
| 代理机构 | Beyer Law Group LLP | 代理人 | Beyer Law Group LLP |
| 主权项 | 1. A method of etching a stack with at least one metal layer in one or more cycles with each cycle comprising: performing an initiation step, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites; performing a reactive step providing one or more cycles, where each cycle, comprises: providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state; andproviding an organic ligand solvent to form volatile organometallic compounds; and performing a desorption of the volatile organometallic compounds. | ||
| 地址 | Fremont CA US | ||