FinFET and method of manufacturing the same

摘要

A FinFET includes a fin structure, a gate and a source-drain region. The fin structure is over a substrate and has a recess of an upper surface of the fin structure and a doped region in the fin structure and adjacent to the recess. The gate protrudes from the recess and across over the fin structure. The source-drain region is in the fin structure and adjacent to the doped region. Methods for forming the FinFET are also provided.

主权项

1. A method of manufacturing a FinFET, comprising:
forming a fin structure over a substrate; forming a dummy gate that crosses over the fin structure; forming a doped region in the fin structure using a plasma doping process and an annealing process; forming a source-drain region in the doped region; removing the dummy gate and a portion of the fin structure beneath the dummy gate to form a cavity; and forming a gate in the cavity.