Enhanced thin film deposition

摘要

Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

主权项

1. An atomic layer deposition (ALD) process for forming a metal carbide thin film comprising a plurality of deposition cycles, at least one cycle comprising contacting a substrate in a reaction space with alternating and sequential pulses of a first reactant that comprises a metal that is to be included in the thin film, a second reactant comprising aluminum and carbon, and a third reactant comprising a silane or borane.