发明名称 |
Solid-state imaging device and image capturing apparatus including the same |
摘要 |
A solid-state imaging device including: a plurality of pixels which are on a same semiconductor substrate and each of which generates a pixel signal; a comparison circuit that is connected to the pixels in each of columns; a D/A conversion circuit that generates a comparison potential and provide the generated comparison potential in common to the comparison circuit in each column; and a D/A conversion circuit output unit provided in a common line for providing the comparison potential to the comparison circuit in each column, wherein the D/A conversion circuit output unit includes: a source follower circuit that is provided to the line and includes a first current source having a transistor, and an amplification transistor having a gate oxide film that is thinner than a gate oxide film of the transistor; and a voltage control circuit that controls a drain-to-source voltage of the amplification transistor. |
申请公布号 |
US9131177(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201414293169 |
申请日期 |
2014.06.02 |
申请人 |
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. |
发明人 |
Shishido Sanshiro;Abe Yutaka;Higuchi Masahiro;Ikuma Makoto |
分类号 |
H04N5/335;H04N5/3745;H04N5/378;H01L27/146;H04N5/357 |
主分类号 |
H04N5/335 |
代理机构 |
Wenderoth, Lind & Ponack, L.L.P. |
代理人 |
Wenderoth, Lind & Ponack, L.L.P. |
主权项 |
1. A solid-state imaging device comprising:
a plurality of pixels which are arranged in rows and columns on a same semiconductor substrate and each of which generates a pixel signal according to an amount of received light; a comparison circuit that is connected in common to the pixels in each of the columns and compares the pixel signal to a comparison signal that is a comparison criterion; a comparison signal generating unit configured to generate the comparison signal and provide the comparison signal in common to the comparison circuit in each column; and a signal conditioning circuit provided in a common signal path for providing the comparison signal from the comparison signal generating unit to the comparison circuit in each column, wherein the signal conditioning circuit includes: a source follower circuit that is provided to the signal path and includes a first current source having a transistor, and an amplification transistor having a gate oxide film that is thinner than a gate oxide film of the transistor; and a voltage control circuit that controls a drain-to-source voltage of the amplification transistor. |
地址 |
Osaka JP |