发明名称 | Semiconductor module | ||
摘要 | A semiconductor module includes an insulating substrate (200) that is made of AlN and that has a first plane (201) and a second plane (202) both of which face mutually opposite directions, a first conductor layer (210) formed on the first plane (201), a second conductor layer (220) formed on the second plane (202), a semiconductor device (300) bonded to the first conductor layer (210) with a first solder layer (510) interposed therebetween, and a heat dissipation plate (400) that is formed in a rectangular shape when viewed planarly and that is bonded to the second conductor layer (220) with a second solder layer (520) interposed therebetween, and, in this semiconductor module, the heat dissipation plate (400) is deformed so as to become convex in a direction in which the second plane (202) is pointed when viewed from a width direction thereof. | ||
申请公布号 | US9129932(B2) | 申请公布日期 | 2015.09.08 |
申请号 | US201214129262 | 申请日期 | 2012.06.27 |
申请人 | ROHM CO., LTD. | 发明人 | Hayashi Kenji;Hayashiguchi Masashi |
分类号 | H01L23/10;H01L23/34;H01L23/367;H01L25/18;H01L25/07;H01L23/24;H01L23/373;H01L23/40;H01L23/36;H01L23/00 | 主分类号 | H01L23/10 |
代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
主权项 | 1. A semiconductor module comprising: an insulating substrate that is made of AlN and that has a first plane and a second plane both of which face mutually opposite directions; a first conductor layer formed on the first plane; a second conductor layer formed on the second plane; a semiconductor device bonded to the first conductor layer with a first solder layer interposed therebetween; and a heat dissipation plate that is formed in a rectangular shape when viewed planarly and that is bonded to the second conductor layer with a second solder layer interposed therebetween; the heat dissipation plate being deformed so as to become convex in a direction in which the second plane is pointed when viewed from a width direction of the heat dissipation plate, wherein a distance in a thickness direction of a surface on a same side as a lengthwise center and lengthwise both ends of the heat dissipation plate is greater than 0 μm and is 100 μm or less. | ||
地址 | Kyoto JP |