| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a wide bandgap semiconductor device with a small and simple structure, which can integrate a switching element and a reflux diode, and a method for manufacturing the same.SOLUTION: In a wide bandgap semiconductor device 1, a wide bandgap semiconductor layer 11 comprises: a drift layer 12 having a first conductivity type and containing a second main surface 11b; a body region 13 provided on the drift layer 12 and having a second conductivity type; a source region 14 provided on the body region 13 in such a manner to be separated from the drift layer 12, containing a part of first main surface 11a and having the first conductivity type; and a contact region 15 provided and arranged on the body region 13 so as to abut the source region 14, and having the second conductivity type. An opening 16 which joins the drift layer 12 to the source region 14, is provided on the body region 13. A source electrode 40 is electrically connected to the source region 14 and the contact region 15.</p> |
