| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which uses a semiconductor layer having favorable crystallinity.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises: a step of forming a base layer 10 on a substrate 90; a step of forming on the base layer 10, an amorphous semiconductor layer 11x including first parts 111, 111Y and a second part 115; a step of removing the base layer below the first parts 111Y, 111 so as to leave the base layer 10 below the second part 115; and a step fo crystallizing the semiconductor layer 11X by crystal growth in a direction from the second part 115 toward the first parts 111, 111Y by heat treatment in a state where a cavity 900 is formed below the first parts 111, 111Y.</p> |
