| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide: a gallium nitride film produced by a sputtering method using a gallium nitride target, which is low in quantity of oxygen, and high in crystallinity and permeability; and a method for manufacturing such a gallium nitride film.SOLUTION: A gallium nitride film is produced by a sputtering method, in which the content of oxygen is 10 atm% or less. According to an X-ray diffraction measurement on the gallium nitride film, the half-peak width of (002)plane is 0.4° or less. A method for manufacturing such a gallium nitride film comprises: a film-formation step for forming a gallium nitride film by a sputtering method using a sputtering target of which the oxygen content is 10 atm% or less; and a heat treatment step for heating the gallium nitride film thus formed at temperature of 800-1200°C.</p> |
