| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact heating container which allows for efficient heat treatment of a SiC substrate.SOLUTION: A heat treatment container is a container for heat treating a SiC substrate 40, at least the surface of which is composed of single crystal SiC, under Si vapor pressure, and includes a container 30 and a substrate support 50. The container 30 has an internal space 33 for achieving the Si vapor pressure, and a part of the internal space 33 is opened. The substrate support 50 can support the SiC substrate 40, and by supporting the SiC substrate 40, the open part of the container 30 is covered and the internal space 33 becomes a sealed space. |
