HEAT TREATMENT CONTAINER, AGGREGATION OF HEAT TREATMENT CONTAINERS, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a heat treatment container which is compact and effectively performs a heating process on a SiC substrate. The heat treatment container is to perform a heating process on a SiC substrate (40) which has a surface of single crystal SiC under Si vapor pressure. The eat treatment container has a container part (30) and a substrate support part (50). The container part (30) has an internal space (33) for realizing Si vapor pressure, which is partly opened. The substrate support part (50) can support the SiC substrate (40). Therefore, the internal space (33) is sealed by covering the opened part of the container part (30).