发明名称 IMAGE SYSTEM WITH THROUGH-OXIDE VIA CONNECTION
摘要 PROBLEM TO BE SOLVED: To provide an image processing system including connection of a through-oxide via 42 between an image sensor die 22 and a digital signal processing die 24 in an image sensor package 20.SOLUTION: An image sensor die and a digital signal processing die are stuck to each other. A through-oxide via connects the bond pads 40 on the image sensor die by means of the metal routing paths 36, 38 in an image sensor and the digital signal processing die. The through-oxide via couples the image sensor dies with the digital signal processing dies simultaneously. The through-oxide via is formed through the shallow trench isolation structure 28 in the image sensor die. The through-oxide via is formed by selective etching of the image sensor and digital signal processing dies.
申请公布号 JP2015162675(A) 申请公布日期 2015.09.07
申请号 JP20150024921 申请日期 2015.02.12
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES LLC 发明人 SWARNAL BORTHAKUR;VLADIMIR KOROBOV;MARC SULFRIDGE
分类号 H01L25/065;H01L21/3205;H01L21/768;H01L23/522;H01L25/07;H01L25/18;H01L27/14 主分类号 H01L25/065
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