| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which is enhanced in processing yield.SOLUTION: A plasma processing apparatus has an upper electrode disposed above a sample table on which a sample as a processing target in a processing chamber is mounted, the upper electrode supplying electric field, a first high-frequency power supply for outputting first high-frequency power to the upper electrode to form the electric field, a lower electrode which is disposed in the sample table and to which second high-frequency power is supplied, an electrostatic attraction electrode disposed in a dielectric membrane which is disposed at the upper portion of the sample table and constitutes a mount face, the electrostatic attraction electrode being supplied with DC power, and a conductive plate which is disposed to surround the outer periphery of the lower electrode through an insulating layer, and set to the ground potential. The insulating layer has impedance smaller than a bias power supply passage and an electrostatic attraction power supply passage. Current of the first high-frequency power flows from the upper electrode through the upper surface of the sample table to a circuit which passes from the conductor plate through a member constituting the inner wall surface of the processing chamber and returns to the high-frequency power supply.</p> |
