| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can remove a salient of a compound semiconductor layer while suppressing exposure of an active layer and an etching amount of an upper semiconductor layer without involving a damage.SOLUTION: A semiconductor device manufacturing method comprises: a laser part formation process of forming on a part of a substrate, a laser part provided with an active layer, an upper semiconductor layer formed on the active layer and a mask formed on the upper semiconductor layer; a semiconductor layer formation process of forming a compound semiconductor layer by an In-containing material, which contacts lateral faces of the laser part and has salients at parts contacting the laser part; and a wet etching process of removing the salients by an etchant containing hydrobromic acid and acetic acid to planarize the compound semiconductor layer. By the wet etching process, (111)A surfaces are formed on the upper semiconductor layer under the mask.</p> |
